Efficiency of dislocation density reduction during heteroepitaxial growth of diamond for detector applications

The development of dislocation density and micro-strain in heteroepitaxial diamond films on iridium was measured over more than two decades of thickness up to d ≈ 1 mm. Simple mathematical scaling laws were derived for the decrease of dislocation density with increasing film thickness and for its correlation with micro-strain. The Raman line width as a measure of micro-strain showed a huge decrease to 1.86 cm−1, close to the value of perfect single crystals. The charge collection properties of particle detectors built from this material yield efficiencies higher than 90% in the hole-drift mode, approaching the performance of homoepitaxial films.