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Radiative recombinations in amorphous Si_1-xNₓ:H-based nanometric multilayer structures have been studied by stationary and time-resolved photoluminescence measurements at room temperature. Such structures show higher photoluminescence efficiency than reference bulk amorphous silicon nitride films. The enhancement is attributed to the localization of electron-hole pairs induced by the multilayer structure. Fast monomolecular recombination processes are shown, with lifetimes dependent on the emission energy. Analysis of photoluminescence and absorption spectra shows a low density of defects and no intermixing at the multilayer heterointerfaces. Such features open the potential for the investigated structures to function as fast optoelectronic devices.
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Giorgis et al. (1999) studied this question.
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