ICARECS-2026 - Advances and Trends in Finfet-Based Biosensor Architectures

FinFET fabricated biosensors offer a favorable platform for future generation label free biomolecular detection due to their superior electrostatic control, 3D gate geometry and high surface to volume ratio. This review rationally analyzes recent (2023–2025) analytical and TCAD based simulation studies on dielectric modulated(DM),junction less (JL), negative capacitance and advanced multigate FinFET biosensor architectures. Particularly retained on model accuracy, physical assumptions and quantitative performance metrics including threshold voltage shift, drain current sensitivity, transconductance, subthreshold slope and limit of detection (LoD). The paper evaluates split gate, twin oxide, π gate, trigate, GAA, forksheet and III&V material based FinFETs, highlighting the tradeoffs between sensitivity, power consumption, scalability and reliability. The role of high k dielectrics ferroelectric layers and wide bandgap/III&V channel materials (GaN, InGaAs, SiGe) is assessed with respect to electrostatic coupling, noise immunity, temperature stability and radiation tolerance. In recent machine learning assisted TCAD optimization frameworks are reviewed to demonstrate the data driven methods improve parameter extraction sensitivity prediction and LoD estimation. By identifying limitations in existing models and reporting consistent benchmarking across architectures, this review clarifies the true novelty and practical relevance of FinFET based biosensors for medical diagnostics environmental monitoring and harsh environment sensing.