Fabrication and electrical performance of through silicon via interconnects filled with a copper/carbon nanotube composite

In this work, through silicon vias (TSVs) were fabricated using a materials system consisting of a composite of copper (Cu) and vertically grown carbon nanotubes (CNTs) as a possible solution to the problems encountered when using Cu-based interconnects. A metallic seed layer, tungsten, was deposited prior to CNT growth. Tungsten replaces Cu as a seed layer due to the thermal sensitivity of Cu at CNT growth temperatures. CNTs were grown both on the wafer surface and inside the silicon vias by chemical vapor deposition. A self-directed densification process was applied to modify the shape of the CNTs from a forest with equal top and bottom dimensions into bundles with a significantly smaller dimension at the top compared to the bottom. This process maximizes the contact area between the Cu electroplating solution and the CNTs. Cu was deposited by periodic pulse electroplating after CNT growth to form the Cu/CNT composite. Wafer thinning and polishing completed the TSV fabrication forming a test configuration to evaluate electrical performance. Experimental results were compared for interconnects filled with pure Cu to those filled with the Cu/CNT composite. The results indicate potential application of the Cu/CNT composite as a TSV interconnect material.