Organometallic vapor phase epitaxial growth and characterization of high purity GaInAs on InP

GaInAs grown on InP at atmospheric pressure using organometallic vapor phase epitaxy is characterized by x-ray diffraction, transmission electron microscopy (TEM), and Hall measurements. The sources used are TMIn, TMGa, AsH3, and PH3 in a carrier gas of H2. Double crystal x-ray diffraction is used to evaluate the mismatch and crystal quality of the GaInAs epitaxial films. Full widths at half-maximum intensity (ω1/2) of the double crystal diffraction peak as small as 50 arc s are obtained. The average ω1/2 is less than 80 arc s for all films grown at deposition temperatures between 520 and 540 °C and with mismatch strains between −4×10−3 and +1×10−3. Standard TEM is used to image Ga0.47In0.53As on InP in cross section. No planar defects and few dislocations are present. High resolution TEM of the Ga0.47Ino.53As/InP interface shows that no strain or mismatch related defects are present for nearly lattice-matched films. Hall mobilities of 10 500 and 47 500 cm2/Vs at 300 and 77 K are measured at n=2×1015 cm−3. These values are comparable to those of good liquid phase epitaxial layers.