Temperature‐dependent light‐output characteristics of GaInN light‐emitting diodes with different dislocation densities

We have experimentally investigated the temperature dependence of optical‐output power of light‐emitting diodes (LEDs) with different threading dislocation densities (TDDs) to assess the influence of the TDD on the temperature stability of LEDs. Whereas the LED with high TDD shows a 64% decrease in optical‐output power when the ambient temperature increases from 20 to 150 °C, the LED with low TDD shows only a 54% decrease. The temperature dependence of the optical‐output power and current dependence of the characteristic temperature Tch of LEDs shows that short radiative recombination lifetime and low TDDs are essential to obtain LED characteristics that are tolerant of high temperatures.