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Normally-Off AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier, Kim, Dong-Seok, Im, Ki-Sik, Kang, Hee-Sung, Kim, Ki-Won, Bae, Sung-Bum, Mun, Jae-Kyoung, Nam, Eun-Soo, Lee, Jung-Hee
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Kim et al. (2012) studied this question.
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