Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates

We report on the demonstration of enhancement-mode n-channel GaN high-voltage MOSFET realized on both p and n-GaN epilayer on sapphire substrates. These MOSFETs, with linear and circular gate geometries, show good dc characteristics with maximum field-effect mobility of 167 cm2/Vmiddots, best reported to date