A novel power device concept, the 3-dimensional RESURF double-gate MOSFET (3D RESURF MOSFET), is reported. The structure is based on an extension of the RESURF concept to the third dimension. From numerical simulations and analytical modelling, the 3D RESURF MOSFET is found to offer superior breakdown capability compared to previously reported lateral power devices and challenges state-of-the art vertical devices such as the VDMOSFET.
No takes yet. Share an insight, caveat, or question.
Udrea et al. (1998) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: