Technology-Independent Non-Quasi-Static Table-Based Nonlinear Model Generation

An analytical extraction of the non-quasi-static nonlinear lookup table FET model at mm-wave frequencies is demonstrated in this study. Frequency dispersion present at mm-wave frequencies is compensated for by introduction of higher order dynamics of nonlinear constituent components. Nonlinear charge- and current-sources are used as the constituent components to represent the nonlinear device where the higher order charge- and current-sources are introduced to compensate for the non-quasi-static effects. The presented approach is validated using SOI Multi-Fin MOSFET transistors, the multiple gate MOSFET structures which have been introduced as an alternative candidate for bulk planar CMOS technology in the nanometer regime. An accurate multibias linear model is employed as the keystone for building the non-quasi-static nonlinear model. Large-signal measurements are used for model validation. Significant improvements are observed over the quasi-static nonlinear model which is demonstrated by excellent agreement between measurements and nonlinear model presented here.