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The deposition of diamond-like carbon (DLC) films at subatmospheric pressure has been achieved by the nanopulse plasma chemical vapor deposition (CVD) method. To realize this process, a high ion density and non-arcing plasma at subatmospheric pressure are required. A static induction (SI) thyristor with an inductive energy storage (IES) circuit was used. The DLC film was obtained under the conventional low-pressure process at 6 Pa, and the characteristics of the high electron temperature and the exponential relationship between pulse frequency and growth rate were observed. Deposition of the DLC film was also achieved at the subatmospheric pressure of 26.7 kPa (200 Torr) using this nanopulse plasma CVD method.
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Ohtake et al. (2004) studied this question.
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