Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3-[micro sign]m spectral region

Light-emitting diodes operating in the 2.8–2.9 µm spectral region have been fabricated from InGaAs and InAsSbP p-n structures grown onto n- and heavily doped n+-InAs substrates. Owing to the high transparency of the n+-InAs and n-InGaAs buffer, the episide-down construction was successfully implemented for LEDs and photodiodes, and room temperature operation with output power and detectivity as high as 400 µW (I = 1A) and 1.5 × 1010cm Hz1/2/W} was correspondingly achieved. Operation of the LEDs and optically coupled LED-photodiode pairs was demonstrated in the 15–190°C temperature range.