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Excitonic effects dominate absorption and loss spectra in many materials. However, they are hard to access computationally, because of the cost of first-principles calculations and because of the scarce reliability of simple approximations. We overcome both limitations by combining a part of the electron-hole Bethe-Salpeter equation with an effective scalar interaction. The partitioning is motivated by the general form of the electron-hole interaction and it can be applied to all materials. First-principles calculations for prototypical semiconductors and insulators demonstrate a speedup of 1 to 2 orders of magnitude for results close to those where the full interaction matrix is used. The method is systematic and can be converged to the benchmark.
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Aichner et al. (2026) studied this question.
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