A Study on Performance Comparison and Application Scenarios of PVD, CVD and ALD Thin-Film Deposition Processes

Semiconductor thin films are the core functional structures of microelectronic and optoelectronic devices. The thickness, uniformity, and density of the thin film directly determine the performance, lifespan, and stability of the device. With the continuous miniaturization and three-dimensionalization of semiconductor devices, traditional deposition processes are struggling to meet the high-precision coating requirements of high aspect ratio micro/nano structures. Therefore, precise process selection has become crucial in semiconductor manufacturing. This paper focuses on three mainstream thin film deposition processes: Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), and Atomic Layer Deposition (ALD). It systematically elucidates the core working principles of these three processes, conducting a horizontal comparison from multiple dimensions, including deposition mechanism, thickness control accuracy, step coverage capability, film quality, and production cost. The paper analyzes the advantages and disadvantages of each process and clarifies the process selection logic in the context of semiconductor device fabrication. Research shows that there is no absolute superiority or inferiority among the three processes, each possesses differentiated application adaptability. PVD is suitable for low-cost planar thin film mass production, CVD balances efficiency and versatility, and ALD dominates the coating of high-end precision micro/nano devices. This paper also summarizes the technical bottlenecks of existing processes and clarifies the industry development trends of low-temperature processing, high-precision low-cost processing, and process integration.