Design, Modeling, and Parametric Optimization of Carbon Nanotube Thin-Film Transistors for High-Performance Display Applications

Carbon nanotubes (CNTs) have attracted significant attention as semiconductor channel materials for thin-film transistor (TFT) applications due to their one-dimensional geometry, superior carrier mobility, and favorable electrical properties. While TFTs are integral components of contemporary display technologies, conventional TFT materials continue to suffer from drawbacks such as high processing temperatures, limited charge transport capability, low ON/OFF current ratios, and poor thermal stability. In this study, CNT-based thin-film transistors (CNTTFTs) are systematically designed, simulated, and optimized using the Nanonet simulation platform, yielding device characteristics that outperform those of traditional TFT configurations. The simulation results demonstrate substantial variation in drain-current performance with CNT length, channel length, network density, and nanotube orientation, with higher current obtained under favorable CNT-network configurations. The results establish the influence of the CNTlength- to-channel-length ratio and network parameters on conductive-path formation and provide design guidance for CNT-TFT optimization. Furthermore, the influence of key CNT physical parameters on transistor current behavior is examined in detail. The results demonstrate that shortchannel operation facilitates enhanced current scaling, and that device performance is predominantly controlled by the ratio of CNT length to inter-tube spacing rather than by the absolute nanotube length. It is also observed that CNT orientation angles of 30° and 60° provide improved transport stability and uniform electrical performance. In addition to improved electrical characteristics, CNT-TFTs show strong potential as driver elements in next-generation flat-panel display (FPD) systems by delivering high drive currents while maintaining thermally safe operation. These findings establish practical design considerations, identify existing limitations, and provide valuable insight for future optimization and fabrication of CNT-based TFT devices. Overall, the study strengthens the understanding of structure–property relationships in CNT-TFTs and confirms their promise as high-mobility semiconductor channels for advanced electronic applications.