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The pattern collapse phenomenon induced by surface tension and Laplace pressure presents considerable challenges in semiconductor cleaning processes. Although several experimental studies have reported nanometer–scale pattern collapse, the underlying mechanisms remain inadequately understood. In this study, a fluid–structure interaction simulation model was developed to reproduce established macroscopic theories, including the Young–Laplace equation and the Euler–Bernoulli beam theory, as well as to align with experimental observations of nanostructure collapse. The model was employed to examine liquid behavior and structural deformation during the drying process, at the nanoscale. The results demonstrate that the simulation effectively captures the pattern deformation phenomena, validating its applicability for evaluating deformation behavior of nanostructure.
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UONAMI et al. (2026) studied this question.
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