Conductivity, Dielectric Relaxation, Electric Modulus Analysis of Manganese‐Doped YCrO 3 Nanostructures

In this work, manganese‐doped YCrO 3 nanostructures are fabricated through a sol–gel process and investigated for their electrical and dielectric properties. Microstructural analysis is performed using Rietveld refinement, field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM). Measurements are conducted over the 303–523 K temperature range and the 100 Hz–2 MHz frequency range. The DC conductivity increases with temperature, confirming the semiconducting nature of the samples, while decreasing with increasing Mn concentration. The temperature dependence of DC conductivity indicates an adiabatic small‐polaron hopping mechanism. The real and imaginary parts of dielectric permittivity are analyzed using the Cole–Cole model with DC conductivity contribution. The conductivities associated with space and free charge carriers decrease with increasing Mn concentration. Frequency‐dependent electric modulus spectra indicate non‐Debye relaxation behavior. The activation energies from DC and AC conduction are comparable, suggesting a common charge‐transport mechanism. Complex impedance analysis reveals dominant grain‐boundary contributions. Schottky emission analysis of the I–V characteristics shows an increase in barrier height with Mn doping, indicating enhanced carrier localization and suppressed interfacial carrier injection. These results demonstrate effective tuning of the electrical, dielectric, and interfacial properties of YCrO 3 nanostructures for future electronic and dielectric applications.