Key Factors Affecting Dynamic Reliability in GaN HEMTs and How Can They Be Mitigated?

Dynamic reliability remains a major barrier to large scale deployment of GaN based high-electron-mobility transistors (HEMTs) in demanding RF and power applications. In this paper we analyse recent experimental and modeling advances that link microscopic trap physics to macroscopic, application-level failure modes such as current collapse, gate/drain lag, dynamic on resistance increase, and threshold-voltage drift. We compare characterization methods (pulsed I–V, DLTS variants, charge-pumping, RF large-signal testing, and optical mapping) in terms of temporal and spatial resolution and practical relevance. Mitigation approaches at device, material, and circuit/system levels are analysed including surface passivation, field-plate design, buffer engineering, gate-stack optimization, thermal management, and cascode/circuit solutions.