Effect of phosphorus and boron impurities on amorphous silicon solar cells

The effect of dopant impurities (P,B) on the performance of sputtered α-SiHx solar cells has been investigated. We find, for example, that during the deposition of the N+ layer of N+-I-Pt Schottky barrier structures, the chamber is contaminated with phosphorous which subsequently degrades the intrinsic film. This effect may be eliminated by prolonged pumping of the chamber between N+ and I layer depositions or by ’’compensating’’ the effects of phosphorous in the I layer through the intentional addition of low levels of boron.