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We propose a homogeneous nanoscaled (∅︁ 250 nm) bilayered Pr0.7Ca0.3MnO3 (PCMO)‐based memory device that exhibits low power and good memristive switching behavior. Accurate control of the oxygen‐deficient (PCMO3–x) layer thickness promotes oxygen migration between PCMO3–x and stoichiometric PCMO (PCMO3). The bilayered PCMO structure was confirmed by X‐ray photoelectron spectroscopy analysis. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Park et al. (2011) studied this question.
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