Room-temperature InAsSbP∕InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5μm) dynamic scene projection

The InAsSbP∕InAs light emitting diodes (LEDs) grown by liquid phase epitaxy and tuned at several wavelengths inside the 3–5μm band were tested. Light pattern, radiation apparent temperature (Ta), thermal resistance, and self-heating details were characterized at T=300K in microscale by calibrated infrared cameras operating in the 3–5 and 8–12μm bands. The authors show that LEDs dynamically simulate very hot (Ta⩾750K) targets as well as cold objects and low observable. They resume that low cost LEDs enable a platform for photonic scene projection devices able to compete with thermal microemitter technology. Proposals on how to further increase LEDs performance are given.