On Technological Aspects in the Development of Perovskite Gamma Radiation Detectors

This paper outlines the protocols, methods, and technological steps used to manufacture perovskite semiconductor radiation detectors and compares them with those used in the manufacture of more traditional semiconductor materials, such as Si, HPGe, CdZnTe, CdTe, and TlBr. We analyze the problems and limitations arising when implementing these technologies at this early stage of perovskite detector development. We examine and critique the methods used in crystal growth and processing. Applying revised processes to CsPbBr3 crystals with dimensions 5 × 5 × 3 mm3 and 4.6 × 4.6 × 2.2 mm3, we have manufactured a number of radiation detectors with different contact architectures—a planar contact structure, a planar structure with a guard ring, and a ring-electrode-type structure. In terms of energy resolution, the ring-drift detectors gave the best energy resolution at low energies, followed by the planar with guard ring and the simple planar detectors. FWHM energy resolutions of less than 1% were obtained at 662 keV (0.79%, planar detector with guard ring, peak-to-Compton ratio of 11) and at 1332 keV (0.86%, ring-drift detector). The FWHM energy resolutions of the ring-drift detectors at 59.5 keV, 122 keV, and 5.9 keV were 2.7 keV (4.5%), 3.4 keV (2.8%), and ≤2.6 keV, respectively.