Studies of indium - A 3 B 6 layered crystal surface nanosystems’ formation by fractal dimension kinetics

We investigate the growth kinetics of indium nanostructures on A3B6 layered chalcogenide crystals (In4Se3, InTe) surfaces using STM-based fractal surface analysis. By applying the Flooding method to STM images of different resolutions, we quantify the evolution of fractal dimension during indium deposition and secondary solid-state dewetting. The results reveal resolution-dependent signatures of Gibbs–Thomson–driven nanostructure coarsening, height-distribution effects, and distinct growth regimes governed by substrate anisotropy. Comparative analysis across macro and nano scale STM areas demonstrates that fractal metrics efficiently capture surface complexity and reliably characterize hetero nanostructure formation on 2D semiconductor templates.