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To suppress graphene agglomeration and improve Cu/graphene interfacial characteristics, this work employs graphene oxide (GO) and Cr sulfate solution. Cr particles are introduced into graphene nanosheets via in situ chemical reduction in a water bath for 3 h. The resulting powder was mixed with copper powder, compacted, and sintered at 950 °C for 90 min. Cr doping may improve graphene dispersion and the interfacial interaction between graphene and copper. Cr‐doped graphene prepared using 0.05 mol/L Cr sulfate and glucose exhibits the most favorable morphology and dispersion under the investigated conditions. X‐ray diffraction (XRD) analysis indicates the presence of a metallic Cr phase, while Raman analysis suggests that the graphene‐based sp 2 carbon framework is retained after Cr modification. Within the investigated addition range from 0 to 1.0 wt.%, the copper matrix composite containing 0.5 wt.% Cr‐doped graphene exhibits favorable comprehensive properties. Cr‐doped graphene is relatively homogeneously dispersed in the copper matrix. The hardness and tensile strength reach 85.6 HV and 245 MPa, respectively, representing increases of 77.6% and 36% compared with pure copper. The electrical conductivity reaches 91.29% IACS. Tensile fracture morphologies of composites present ductile fracture characteristic, and the improved graphene dispersion and metallurgical bonding of Cu/graphene interface is favorable for load transfer.
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Yang et al. (2026) studied this question.
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