Study on the Polishing Mechanism of SiC Textured Surfaces Under Water‐Lubricated Conditions

Silicon carbide (SiC) is indispensable for high‐temperature and semiconductor applications, but its extreme hardness and chemical inertness impede precision polishing. Surface texturing has become an effective strategy for reducing friction and wear, which is widely used in high‐temperature kiln furniture and wear‐resistant sealing rings. This study investigates the polishing process of diamond grits on SiC textures in a water‐lubricated environment via molecular dynamics simulations. Water‐film thickness, groove depths and widths are used to investigate the action mechanism. Underwater lubrication conditions, the water film exerts an upward electrical double‐layer force that effectively mitigates stress concentration and reduces subsurface damage relative to dry polishing. The peaks on the machined surface are removed effectively, and the friction area is smoother. Surface textures further ameliorate the stress field, lowering the Von Mises stress and suppressing subsurface defect formation. The grooves accommodate wear particles and facilitate atomic flow along their boundaries, thereby accelerating subsurface heat dissipation.