BN-Doped Graphene on Cu(111): Reproducible Growth and Modified π-Band Dispersion

Extensive research has been devoted to modifying graphene’s band structure through boron nitride (h-BN) doping. The isostructural and isoelectronic nature of graphene and h-BN makes them ideal candidates for forming hybrid materials that combine the properties of both systems. However, one of the main bottlenecks in achieving this goal has been the lack of a reproducible synthesis route that consistently yields materials with comparable properties. In this work, we present a reproducible chemical vapor deposition (CVD) recipe for the synthesis of boron- and nitrogen-doped graphene (BN-graphene) on Cu(111), which has been successfully reproduced in up to four different setups. The resulting BN-graphene exhibits low BN segregation, with BN domains homogeneously incorporated within the graphene lattice. Angle-resolved photoemission spectroscopy (ARPES) reveals that BN doping modifies the band structure of pristine graphene, leading to a flattening of the π band (valence band). This modified π-band dispersion is consistent with a possible bandgap opening, although the present data do not allow an unambiguous determination of the bandgap.