Gap‐Filling Stencil Lithography for Precise and High Yield Patterning of Two‐Dimensional Materials

Two‐dimensional materials (2DMs) are considered revolutionary candidates for manufacturing electronics because of their atomically thin nature and exceptional electrical properties. Lithography is essential for patterning 2DMs and fabricating electronic devices. However, conventional water‐based processes such as photolithography fail to achieve high‐yield production because of 2DM delamination from the substrate. Although non‐water‐based stencil lithography is an alternative, the inherent gap between the mask and substrate causes blurring, obscuring high‐precision definition. In this study, we present gap‐filling stencil lithography (GSL), which introduces a protective layer to eliminate this gap, thereby suppressing blurring and enabling precise patterning for 2DMs. Pattern arrays fabricated through multialignment GSL achieved an exceptional 100% yield, compared to the 79.2% yield obtained through photolithography. GSL was implemented on various 2DMs to validate its universality, demonstrating repeatability by maintaining consistent dimensions after consecutive GSL cycles without mask degradation. Finally, the electrical performance of edge‐contact field‐effect transistors fabricated using GSL was evaluated, which confirms GSL as a practical approach to manufacture electronic devices utilizing 2DM. Consequently, this GSL method is expected to emerge as a promising patterning candidate for 2DM because it can overcome the critical processing vulnerabilities of conventional lithography to ensure high‐yield production.