Carrier Mean Free Paths and Scattering Times in High-Mobility Semiconductors Compared with Lattice and Frame Scales

This study computes a semiconductor transport or energy quantity from published material parameters and compares it, in deposited code, with the energy and density scales associated with a stated gravitational density bound. The headline computed values are: insb_mfp_nm = 605; si_mfp_nm = 47.4; insb_tau = 6.129e-13. All results were obtained by calculation from the stated inputs; this is a simulated and computed study, not a measurement. Where the comparison with the universal scale shows a wide separation, that separation is stated plainly as a negative result for laboratory relevance, while comparisons among laboratory quantities themselves are reported at the accuracy their formulae support. The full numerical record, including every material case evaluated, is deposited in results.json alongside the script that produced it, so that any input can be replaced and the entire calculation regenerated.