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On a high-mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, kBTτ/>1. It is shown that the ``metallic'' behavior of the resistivity (dρ/dT>0) of the low-density 2DHG is caused by the hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant F₀^σ which controls the sign of dρ/dT.
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Proskuryakov et al. (2002) studied this question.
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