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Structural reorientation owing to the incorporation of sulfur in nitrogen enriched nanoporous polytriazine (SNENP) leads to the formation of a stacked polymeric framework. This stacking aligns the electron density in the framework through facilitating the delocalization of electrons leading to a reduction in the bandgap with an increase in electrical conductivity. A significant reduction in bandgap from 3.10 eV in the pristine nitrogen enriched nanoporous polytriazine (NENP) to 1.14 eV in SNENP was observed, which indicates a transition in optical absorption from ultraviolet (UV) to near infrared (NIR) region. The sulfur enrichment improves the electrical conductivity from 6.54 to 28.84 S m −1 at room temperature. The SNENP‐based photodetector devices show a high photocurrent of 10.63 mA (vs 1.01 mA in NENP) and a responsivity of 107.69 A W −1 (vs 34.61 A W −1 in NENP) at a voltage of −10 V with an 808 nm incident light with optical power density of 1.0 µW mm −2 . This enhanced photodetection performance is associated with the increased charge carrier density, high electrical conductivity, and reduced trap density within stacked nanoporous structure of SNENP. These findings demonstrate that dual‐heteroatom nanoporous polytriazine framework (SNENP) provides an effective platform for the development of high‐performance NIR photodetectors.
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Gupta et al. (2026) studied this question.
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