Key points are not available for this paper at this time.
Atomically thin semiconductors, e. g. , MoS₂, may be an alternative to silicon in transistor electronics, but their electron mobilities as measured are apparently rather low. A theoretical study shows that the low mobilities are caused by the scattering of electrons by charged impurities and points to high- dielectric coatings as a way to boost the mobilities of high-impurity samples.
A Tue, study studied this question.