Deuterium-enabled stabilization of metal/oxide interfaces via suppressed oxygen diffusion in BEOL-compatible InGaZnO thin-film transistors

Key Points

• The research aims to understand how different annealing environments affect the electrical properties and interfaces of InGaZnO thin-film transistors.
• Systematic investigation of post-metallization annealing conditions
• Analysis of a-IGZO thin-film transistors with tungsten contacts
• Measurement of electrical and interfacial properties
• Deuterium-rich environments enhance interface stability
• Suppressed oxygen diffusion leads to improved electrical performance
• Post-metallization annealing notably affects TFT characteristics