Deuterium-enabled stabilization of metal/oxide interfaces via suppressed oxygen diffusion in BEOL-compatible InGaZnO thin-film transistors

Woosup Byun; Tae-Hyun Kil; Bong Ho Kim; Yunseok Kim; Hwanyeol Park; Jun-Young Park; Dae-Myeong Geum

doi:10.1039/d6tc00357e

January 1, 2026Journal of Materials Chemistry COpen Access

Deuterium-enabled stabilization of metal/oxide interfaces via suppressed oxygen diffusion in BEOL-compatible InGaZnO thin-film transistors

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Key Points

The research aims to understand how different annealing environments affect the electrical properties and interfaces of InGaZnO thin-film transistors.
Systematic investigation of post-metallization annealing conditions
Analysis of a-IGZO thin-film transistors with tungsten contacts
Measurement of electrical and interfacial properties
Deuterium-rich environments enhance interface stability
Suppressed oxygen diffusion leads to improved electrical performance
Post-metallization annealing notably affects TFT characteristics

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Implication

Investigates the effects of PMA ambient on electrical properties in InGaZnO TFTs, suggesting improvements for device performance.

Abstract

This study systematically investigates the influence of post-metallization annealing (PMA) ambient on the electrical and interfacial properties of a-IGZO thin-film transistors (TFTs) incorporating BEOL-compatible tungsten (W) contacts.

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Byun et al. (2026) studied this question.

synapsesocial.com/papers/69e3216540886becb6540a87 https://doi.org/10.1039/d6tc00357e

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Deuterium-enabled stabilization of metal/oxide interfaces via suppressed oxygen diffusion in BEOL-compatible InGaZnO thin-film transistors

Key Points

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Implication

Abstract

Discussion

Cite This Study

Deuterium-enabled stabilization of metal/oxide interfaces via suppressed oxygen diffusion in BEOL-compatible InGaZnO thin-film transistors

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

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