P‐21: Post‐Annealing Optimization for Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Atomic‐Layer‐Deposited Ultrathin AlOx Dielectric

The effects of post‐annealing on amorphous InGaZnO (a‐IGZO) TFTs with ultrathin atomic layer deposited (ALD) AlO x gate insulator (GI) were investigated. The non‐annealed devices exhibited uncontrollable gate leakage current while postannealing in either oxygen (O 2 ) or nitrogen (N 2 ) exhibited noticeable improvements. Optimizing O 2 ‐annealed devices demonstrated the most optimal performance, including a low subthreshold swing of 61.6 mV/dec and a high on/off current ratio over 10 9 . Capacitance‐voltage and X‐ray photoelectron spectroscopy analyses further revealed the underlying mechanism of defect elimination at the AlO x /a‐IGZO interface.