Interface-engineered p-CsCu 2 I 3 /n-Ga 2 O 3 nanowire heterojunctions for self-powered ultraviolet photodetection

Key Points

• To develop a self-powered UV photodetector using p-CsCu2I3/n-Ga2O3 nanowires with enhanced performance through interface engineering.
• Designed an all-inorganic nanowire heterojunction device
• Utilized a CuI interlayer for interface enhancement
• Conducted performance evaluations for responsivity and detectivity
• Achieved a responsivity of 120.3 mA W−1
• Achieved a detectivity of 1.5 × 10^12 Jones
• Demonstrated UVA–UVC response capability