Polypyridinophane Thin Films via CVD process for Polymeric Dielectric Layer on Oxide TFT with Ultrahigh Dielectric Constant

Key Points

• This study aims to improve the performance of oxide thin-film transistors by developing high-k polymer gate dielectrics.
• Developed pyridinophane-based polymers processed via Gorham-type chemical vapor deposition (CVD).
• Evaluated dielectric properties and stability of the polymer films on oxide substrates.
• Achieved significantly enhanced capacitance with the new polymer dielectrics compared to traditional materials.
• Demonstrated improved interfacial stability, leading to better performance in thin-film transistors.