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Amorphous oxide semiconductors (AOS) containing transition metals have garnered significant attention as promising alternatives to conventional semiconductors due to their various technical advantages, including low-temperature large-area deposition, the ability to maintain performance under mechanical deformation, and high carrier mobility even in the amorphous state. This review analyzes the crystallinity, deposition conditions, and electrical properties of indium gallium zinc oxide (IGZO), a representative material among AOS, and examines how these factors influence the performance of amorphous IGZO (a-IGZO) transistors. Additionally, the mechanisms behind the reliability and performance degradation of these devices, as well as their structural characteristics, are summarized. Recent application trends are categorized and analyzed in the fields of displays, sensors, and memory/logic devices. Lastly, this review identifies the remaining technical challenges and discusses promising directions for the broader deployment of an a-IGZO transistor in emerging electronic applications.
Kim et al. (Mon,) studied this question.