IQE (United States)

Recent papers from IQE (United States)

1. High-performance mid-infrared InP-based quantum cascade lasers monolithically integrated onto siliconAIP Advances · 2026
2. Methodological approaches and the clinical utility of non-invasive estimated pulse wave velocityAJP Heart and Circulatory Physiology · 2026
3. Ternary-containing Al 0.7 InAsSb digital alloys on InP and InP-on-Si [Invited]Optical Materials Express · 2025
4. Dilute nitride based sensing on 200mm GaAs & GaAs-Ge templates2024
5. Progress in performance of quantum cascade lasers monolithically integrated onto silicon2024
6. High peak power quantum cascade lasers monolithically integrated onto silicon with high yield and good near-term reliabilityApplied Physics Letters · 2023
7. Investigation of bulk and surface minority carrier lifetimes in metamorphic InAsSb grown on GaAs and SiJournal of Applied Physics · 2021
8. Three-dimensional visualization of Sb segregation in InAs/InAsSb superlattices using atom probe tomographyJournal of Applied Physics · 2020
9. Single‐Crystal Multilayer Nitride, Metal, and Oxide Structures on Engineered Silicon for New‐Generation Radio Frequency Filter Applicationsphysica status solidi (a) · 2020
10. Direct MBE growth of metamorphic nBn infrared photodetectors on 150 mm Ge-Si substrates for heterogeneous integrationJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2019
11. InP-based quantum cascade lasers monolithically integrated onto siliconJournal of International Crisis and Risk Communication Research · 2018
12. Molecular beam epitaxial growth and characterization of large-format GaSb-based IR photodetector structures [Invited]Optical Materials Express · 2018
13. High operating temperature nBn detector with monolithically integrated microlensApplied Physics Letters · 2018
14. Room temperature operation of quantum cascade lasers monolithically integrated onto a lattice-mismatched substrateApplied Physics Letters · 2018
15. Thermal Effects between Carbon-Doped GaN and AlGaN Back-Barrier in AlGaN/GaN HEMTs on Si (111) SubstratesECS Journal of Solid State Science and Technology · 2017
16. Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSbApplied Physics Letters · 2016
17. Mid-wave interband cascade infrared photodetectors based on GaInAsSb absorbersSemiconductor Science and Technology · 2016
18. Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz BandwidthIEEE Transactions on Electron Devices · 2015
19. Study of two‐dimensional electron gases wave function in double‐heterojunction transistorsElectronics Letters · 2015
20. High-temperature operation of interband cascade infrared photodetectors with cutoff wavelengths near 8     μ mOptical Engineering · 2015