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Al x In 1−x As y Sb 1−y is a promising multiplier for avalanche photodiodes (APD) on InP for near-infrared applications. In this work, we investigated the potential of two different ternary-containing layer stacks for the growth of AlInAsSb digital alloys on InP and InP-on-Si templates with applications in future photodetectors. STEM measurements confirmed high-quality material and interfaces on both substrates with no evidence of phase separation. Low dark currents and high gains were measured from PIN diodes grown on both substrates, with slightly higher dark currents observed in the Si-based device due to defects resulting from lattice mismatch in the template.
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Wang et al. (2025) studied this question.
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