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We report AlInAsSb separate absorption, charge, and multiplication (SACM) avalanche photodiodes with a >3- <tex-math notation="LaTeX">μ m </tex-math> optical cutoff, operating at 240 K. Gain and dark current performance further improve with reduced temperature. 65% external quantum efficiency at 2- <tex-math notation="LaTeX">μ m </tex-math> is achieved without anti-reflection enhancement.
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Jones et al. (2022) studied this question.
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