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Sensing in the critical 1100-1400nm spectral region is well served by VCSELs and photodetector utilizing dilute nitride (DN) materials grown on GaAs substrates. For CMOS compatibility the growth of DN materials on 200mm Ge wafers has also been demonstrated. The DN VCSEL structure can also be grown using MOCVD for the DBR which gives the ideal mix of performance and high-volume throughput. The successful growth of equivalent performance DN materials by MOCVD has been achieved for photodetector, work on VCSEL is ongoing.
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Clark et al. (2024) studied this question.
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