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This research reveals low dark current and ultra-high-speed characteristics in dilute nitride photodetectors, suggesting advances in GaAs technology.
Dilute Nitride Photodetectors Dilute nitride photodetectors at 1310 nm wavelength fabricated using standard GaAs technology are reported that operate with low dark current and ultra-high speed, despite their very low carrier mobility compared to those on InP; achieved by embedding confined cloud of electrons, kept in quasi-equilibrium, that landscape the electric field, and respond collectively to the photoelectrons, circumventing transit time limitations. More details can be found in article 10.1002/adom.202500115 by Bahram Nabet and co-workers.
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Nabet et al. (2025) studied this question.
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