State Research Institute of Applied Problems

Recent papers from State Research Institute of Applied Problems

1. Motion of a Model System Near Intersecting CurvesProceedings of the Steklov Institute of Mathematics · 2025
2. Dynamics Problems for Mechanical Systems with Geometric SingularitiesVestnik St Petersburg University Mathematics · 2026
3. Reaction Forces and Friction Forces in the Dynamics of Systems with Geometric SingularitiesVestnik St Petersburg University Mathematics · 2024
4. Weighted Ontology Graph Construction for the Electrotechnical Sector from the Point of View of its Vulnerabilities2024
5. Top-20 Weakest from Cybersecurity Elements of the Industry Production and Technology Platform 4.0 Information Systems2024
6. Biochemical factors of hypoxia and their role in assessing the functional state of the fetusJournal of obstetrics and women s diseases · 2021
7. Hydrolysis Lignin as a Sorbent and Basis for Solid Composite BiofuelAdvances in Bioscience and Biotechnology · 2016
8. Study of silicate glasses with PbS nanoparticles using small-angle neutron scatteringJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques · 2016
9. Broad band thermostable polarizing film based on poly (vinyl alcohol), a quinoline derivative and ZnO nanoparticlesRSC Advances · 2016
10. Rapid thermal annealing of high concentration mixed As/In- and P/In-implanted silicon single crystalsJournal of Applied Physics · 1990
11. Residual defects in silicon after As+ion implantation at self-annealing regimesRadiation Effects · 1987
12. Redistribution of ion-implanted boron and phosphorus profiles in silicon under annealing in inert and oxidizing ambientsRadiation Effects · 1985
13. EPitaxial regrowth and defect formation during pulsed nanosecond annealing of amorphous layers. Part II: Model of liquid phase epitaxy and secondary defect formationRadiation Effects · 1985
14. Modification of silicon structure during highly intensive Ar+ion implantationRadiation Effects · 1985
15. Epitaxial regrowth and defect formation during pulsed nanosecond annealing of amorphous layers. Part 1: Experimental resultsRadiation Effects · 1985
16. Flash – lamp annealing of phosphorus and antimony implanted siliconRadiation Effects · 1984
17. Crystallization and defects annealing during highly intensive ion implantation in siliconRadiation Effects · 1984
18. Peculiarities of divacancy annealing in radiation defect clustersRadiation Effects · 1984
19. Structure and electrophysical properties of silicon crystals after antimony implantation with subsequent laser annealing and thermal treatmentRadiation Effects · 1984
20. Elastic and inelastic energy deposition distributions during ion implantation in solidsRadiation Effects · 1983