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The formation and complete recrystallization of an amorphous silicon layer during highly intensive Ar ion implantation have been studied. Rutherford backscattering and electron microscopy techniques have shown some specific features of such a crystallization as compared with a conventional thermal annealing. A model of dynamic cascade annealing of secondary defects is suggested to account for the experimental results.
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Комаров et al. (1984) studied this question.
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