Structure and electrophysical properties of silicon crystals after antimony implantation with subsequent laser annealing and thermal treatment

The thermal stability of laser annealed (111)-oriented silicon layers ion implanted with antimony has been studied. It is experimentally shown that thermal treatment at temperatures of 600-800 K results in an increase of the sheet resistivity. The maximum value of the resistivity was obtained at 1270 K. For an implantation dose of 1.2 × 1015 ion/cm2 a region of positive annealing was detected. It is shown that modification of the structure properties (appearance of antimony precipitates, generation of dislocations and dislocation loops decorated by the impurity) begins when the temperature is as high as 800-900 K. The structure obtained after the thermal treatment was found to be strongly dependent on that of the laser annealed samples.