PrivaTran (United States)

Recent papers from PrivaTran (United States)

1. A synaptic device built in one diode–one resistor (1D–1R) architecture with intrinsic SiO x -based resistive switching memoryPhysical Sciences Reviews · 2016
2. Resistive switching characteristics and mechanisms in silicon oxide memory devicesPhysical Sciences Reviews · 2016
3. Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memoryApplied Physics Letters · 2016
4. Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memoryApplied Physics Letters · 2015
5. Electroforming and resistive switching in silicon dioxide resistive memory devicesRSC Advances · 2015
6. Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimizationJournal of Applied Physics · 2014
7. Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programingJournal of Applied Physics · 2014
8. Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere LithographyNano Letters · 2013
9. Effects of sidewall etching on electrical properties of SiOx resistive random access memoryApplied Physics Letters · 2013
10. Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memoryApplied Physics Letters · 2013
11. Tristate Operation in Resistive Switching of SiO₂ Thin FilmsIEEE Electron Device Letters · 2012
12. Study of polarity effect in SiOx-based resistive switching memoryApplied Physics Letters · 2012
13. Memory switching properties of e-beam evaporated SiOx on N++ Si substrateApplied Physics Letters · 2012