Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory

Switching characteristics of edge and bulk device structures and an unusual backward-scan effect are investigated in SiOx-based resistive memory. Adding external resistance is found to dramatically affect reset voltage, providing insight into the unique unipolar operation. Non-edge, bulk SiOx-based devices allow flexibility in the fabrication process and hydrogen incorporation improves electroforming and device yield. A backward-scan phenomenon is examined by investigating the DC and AC pulse responses, which defines requirements for ON and OFF programming duration. Circuit-level simulation using a Verilog-A model aids device characterization and programming strategy development for future nonvolatile memory applications.