Study of polarity effect in SiOx-based resistive switching memory

Yao‐Feng Chang; Pai-Yu Chen; Yen‐Ting Chen; Fei Xue; Yanzhen Wang; Fei Zhou; Burt Fowler; Jack C. Lee

doi:10.1063/1.4742894

July 30, 2012Applied Physics Letters

Study of polarity effect in SiOx-based resistive switching memory

View at Publisher

Ask AI

Bookmark

Share

Ask about this paper

Answers are grounded in this paper and cite their sources.

Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Yao-Feng Chang, Pai-Yu Chen, Yen-Ting Chen, Fei Xue, Yanzhen Wang, Fei Zhou, Burt Fowler, Jack C. Lee; Study of polarity effect in SiOx-based resistive switching memory. Appl. Phys. Lett. 30 July 2012; 101 (5): 052111. https://doi.org/10.1063/1.4742894 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Chang et al. (2012) studied this question.

synapsesocial.com/papers/6a6278995a5e300a328a0d79 https://doi.org/10.1063/1.4742894

View at Publisher

Ask AI

Bookmark

Share

Study of polarity effect in SiOx-based resistive switching memory

Ask about this paper

Abstract

Discussion

Cite This Study

Study of polarity effect in SiOx-based resistive switching memory

Ask about this paper

Abstract

Discussion

Cite This Study

Keep reading

Keep reading