MBE Growth of High-Quality HgCdSe for Infrared Detector Applications

HgCdSe has recently been proposed as a potential alternative material to HgCdTe for fabricating high-performance infrared detectors. This work presents a study on the growth of high-crystalline-quality HgCdSe materials on GaSb (211)B substrates via molecular beam epitaxy and demonstration of the first prototype HgCdSe-based mid-wave infrared detectors. By optimizing the MBE growth parameters, and especially the thermal cleaning process of the GaSb substrate surface prior to epitaxial growth, high-quality HgCdSe material was achieved with a record XRD full width at half maximum of ~65 arcsec. At a temperature of 77 K, the mid-wave infrared HgCdSe n-type material demonstrated a minority carrier lifetime of ~1.19 µs, background electron concentration of ~2.2 × 1017 cm−3, and electron mobility of ~1.6 × 104 cm2/Vs. The fabricated mid-wave infrared HgCdSe photoconductor presented a cut-off wavelength of 4.2 µm, a peak responsivity of ~40 V/W, and a peak detectivity of ~1.2 × 109 cmHz1/2/W at 77 K. Due to the relatively high background electron concentration, the detector performance is lower than that of state-of-the-art low-doped HgCdTe counterparts. However, these preliminary results indicate the great potential of HgCdSe materials for achieving next-generation IR detectors on large-area substrates with features of lower cost and larger array format size.