Simultaneously enhanced mobility and stability in In2O3 thin-film transistor by nitrogen modification

Oxide thin-film transistors (TFTs) with high mobility and excellent stability are extremely desired for advanced displays. In this work, we simultaneously enhanced the mobility and stability of In2O3 TFTs by nitrogen modification strategy, and systematically investigated the effects of nitrogen doping content on the structures and properties of In2O3 films and the TFT performance. With increasing amount of the nitrogen flow rate from 0 to 9 SCCM, crystallinity and surface quality are improved, while the oxygen defect, optical bandgap, and Urbach energy are decreased, gradually. At a suitable nitrogen flow rate of 6 SCCM, In2O3 films exhibit optimal comprehensive properties, such as high crystallinity, low surface roughness, and defect density, yielding significant enhancement in TFT performance. In particular, the N modified In2O3 TFT demonstrates a highest mobility of 24.96 cm2/V s, accompanied by superior positive and negative bias stability. And then, degradation mechanisms of the TFT stabilities are comprehensively revealed. The findings may be generalizable to other oxide electronics.